The DDS2010 offers an integrated expansion and breaking solution to achieve high-yield and high-throughput die singulation of wafers processed using Stealth Dicing™ process (SD)※.
*Stealth Dicing™ is a processing method that focuses a laser within the workpiece to form a modified layer, after which a tape expander is used to separate the die. This processing method is effective in achieving street reduction for small die or rectangular-shaped die such as RFID ICs and line sensors.
Scan breaking can be performed at a set speed for the stable separation of any die size. This is faster than 3-point breaking which requires the breaking bar to stop at each line.
|Wafer||Φ8 inch x 0.1 mm thick|
|Die size||0.5 × 0.5 mm|
Note: These are DISCO measurements and sample process times.
These results cannot be guaranteed for all conditions
|Max. workpiece size||-||Φ8 inch|
|Dice size||mm||0.1～0.5 (narrow side)
Max. 20 mm (long side) *long die only
|Wafer mounting accuracy X/Y direction (frame mount)||mm||±2.5|
|Wafer mounting accuracy θ direction (frame mount)||°||±3°|
|Equipment dimensions (W×D×H)||mm||718 × 897 × 1,608 (including status indicator)|
*Product appearance, features, specifications, and other details may change due to technical
*Please read the standard specification sheet thoroughly before use.