Stealth Dicing™ process can be performed based on the wafer surface height, making it possible to reliably process wafers with significant warpage.
Wafer shape is measured using a high-resolution sensor to singulate at the optimal processing area.
High-quality processing can be achieved for sapphire, SiC, and GaAs using laser oscillators suited for each material.
|Processing method||-||Stealth Dicing™|
|Max. workpiece size||mm||Φ200|
|Moving speed||mm/s||1 ～ 1,000|
|Max. rotating angle||deg||380|
|Machine dimensions (W×D×H)||mm||950 × 1,732 × 1,800|
|Machine weight||kg||Approx. 1,800|
*Product appearance, features, specifications, and other details may change due to technical
*Please read the standard specification sheet thoroughly before use.